Photosensitive hetero-pairing of p-GaAs/n-Si by pulsed-laser deposition

Journal of Physics D: Applied Physics

Volumn 38, Issue 22, 2005, Pages 4048-4052

  Ullrich, B ^a   Erlacher, A ^a  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; PHOTOCURRENTS; PHOTOSENSITIVITY; PULSED LASER DEPOSITION; SEMICONDUCTOR JUNCTIONS;

HETERO-PAIRING; PHOTOSENSITIVE DIODES; SI SUBSTRATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 27844519221     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/38/22/007     Document Type: Article

References (14)

1. Chediak A, Scott K and Zhang P 2002 TICS 4, MSE 225 http://www.mse. berkeley.edu/∼pzhang/MSE225/TICS4GRP7.pdf
2. Arokiaraj J, Soga T, Jimbo T and Umeno M 1999 Appl. Phys. Lett. 75 3826
3. Chandrasekaran N, Soga T and Jimbo T 2003 Appl. Phys. Lett. 82 3892
4. Smith D L 1995 Thin-Film Deposition, Principles and Practice (New York: McGraw-Hill) p 394
5. Budyanu V A, Chechuy S N, Damaskin I A, Fedoseev S A, Nasakin A A, Pyshkin S L, Valkovskaya M I and Zenchenko V P 1984 Phys. Status Solidi a 91 737
6. Ullrich B, Erlacher A, Yano S, Schroeder R, Gerasimov T G and Haugan H J 2003 Proc. SPIE 4977 180
7. Erlacher A, Ambrico M, Capozzi V, Augelli V, Jaeger H and Ullrich B 2004 Semicond. Sci. Technol. 19 1322
8. Ullrich B, Erlacher A, Gerasimov T G, Komarova E Y and Jaeger H 2004 Proc. SPIE 5359 23
9. Ullrich B, Erlacher A and Jaeger H 2004 Proc. SPIE 5339 365
10. Erlacher A and Ullrich B 2004 Semicond. Sci. Technol. 19 L9
11. Ullrich B, Erlacher A and Danilov E O 2004 Semicond. Sci. Technol. 19 L111
12. Miller J C and Haglund R F 1998 Laser Ablation and Desorption (San Diego: Academic) p 191
13. Kasap S O 2002 Electronic Materials and Devices (New York: McGraw-Hill) p 419
14. Ullrich B, Loeher T, Segawa Y and Kobayashi T 1999 Mater. Sci. Eng. B 65 150