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IEEE Photonics Technology Letters

Volumn 17, Issue 8, 2005, Pages 1617-1619

Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

(1) Kim, Seong Jin a

a Itswell Co Ltd (South Korea)

Author keywords

GaN; III V light emitting diode (LED); Indium tin oxide (ITO); Metal organic chemical vapor deposition

Indexed keywords

ELECTRODES; ETCHING; GALLIUM NITRIDE; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL COMPOUNDS; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TIN COMPOUNDS;

CHEMICAL WET ETCHING; INDIUM-TIN-OXIDE (ITO); TRANSPARENT ELECTRODE; VERTICAL ELECTRODE;

LIGHT EMITTING DIODES;

EID: 23844531492 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/LPT.2005.851982 Document Type: Article

Times cited : (27)

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