Physics-based intrinsic model for AlGaN/GaN HEMTs

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Wu, Shangli ^a   Webster, Richard T ^b   Anwar, A F M ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; MONTE CARLO METHODS; PIEZOELECTRICITY; POISSON EQUATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

DANGLING BONDS; HETEROINTERFACE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0000831002     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003409     Document Type: Conference Paper

References (9)

1. S. C. Binari, J. M. Redwing, G. Kelner and W. Kruppa, Electron. Lett., vol. 33, No. 3, p. 242, 1997.
2. S. C. Binari, Electrochem. Soc. Proc., 95-21, p. 136, 1995.
3. J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock and W. C. Mitchel, Appl. Phys. Lett., vol. 69, p. 963, 1996
4. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove and J. Redwing, Electron. Lett., p. 241, Aug. 1997.
5. R. T. Webster and A.F.M. Anwar, MRS Proc. vol. 428, p.929, 1997.
6. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott and J. A. Higgins, IEEE Electron Dev. Lett., vol. 17, No.7, p. 325, 1996.
7. M. S. Shur and M. A. Khan, MRS Bull., p. 44, Feb., 1997
8. J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock and W. C. Mitchel, Appl. Phys. Lett., vol. 69, p. 963, 1996
9. S. Strite and H. Morkoc, J. Vac. Sci. Technol., vol. B 10, No. 4, p. 1237, 1992.