메뉴 건너뛰기




Volumn 90, Issue 2, 2001, Pages 994-1000

Spatial effects on ideality factor of amorphous silicon pin diodes

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035878836     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1379560     Document Type: Article
Times cited : (42)

References (35)
  • 25
    • 0347856184 scopus 로고    scopus 로고
    • note
    • For simplicity it is assumed that the quasi-Fermi levels for free charge carriers are equal to those for trapped charge, which were defined and used according to Ref. 24.
  • 28
    • 0347226092 scopus 로고    scopus 로고
    • Ph.D. thesis, Delft University of Technology Universal, Veenendaal, The Netherlands
    • J. A. Willemen, Ph.D. thesis, Delft University of Technology (Universal, Veenendaal, The Netherlands, 1998).
    • (1998)
    • Willemen, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.