Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 258-260

  Fitouri, H ^a   Benzarti, Z ^a   Halidou, I ^a   Boufaden, T ^a   Jani, B El ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Ellipsometry; Metalorganic vapor phase epitaxy; Rayleigh criterion

Indexed keywords

ELLIPSOMETRY; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; REFRACTIVE INDEX; SILICON NITRIDE; SURFACE ROUGHNESS;

GROWTH RATE; RAYLEIGH CRITERION; REFLECTANCE SIGNAL EVOLUTION;

THIN FILMS;

EID: 33750509184     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.078     Document Type: Article

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