In-situ spectroscopic ellipsometry investigation and control of GaN growth mode in metal-organic vapor phase epitaxy at low pressures of 20 Torr

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 661-664

  Cao, B ^a,b   Xu, K ^a   Ishitani, Y ^a,b   Yoshikawa, A ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b CHIBA UNIVERSITY   (Japan)

Author keywords

GaN; Growth mode; In situ spectroscopic ellipsometry; Metal organic vapor phase epitaxy

Indexed keywords

CONTAMINATION; ELLIPSOMETRY; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SPECTROSCOPIC ANALYSIS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

GAN; GROWTH MODE; IN SITU SPECTROSCOPIC ELLIPSOMETRY; REACTOR PRESSURE;

GALLIUM NITRIDE;

EID: 17144436157     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.01.035     Document Type: Conference Paper

References (7)

1. Amano H., Sawaki N., Akasaki I., Toyoda Y. Appl. Phys. Lett. 48:1986;353.
2. Nakamura S. Jpn. J. Appl. Phys. 30:1991;L1705.
3. Wu X.H., Fini P., Keller S., Tarsa E.J., Heying B., Mishra U.K., DenBaars S.P., Speck J.S. Jpn. J. Appl. Phys. 35:1996;L1648.
4. Zettler J.-T., Haberland K., Zorn M., Pristovsek M., Richter W., Kurpas P., Weyers M. J. Cryst. Growth. 195:1998;151.
5. Figge S., Bottcher T., Einfeldt S., Hommel D. J. Cryst. Growth. 221:2000;262.
6. Yoshikawa A., Xu K., Taniyasu Y., Takahashi K. Phys. Status Solidi (a). 190:2002;33.
7. Taniyasu Y., Yoshikawa A. J. Electron. Mater. 30:2001;1402.