In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 211-215

  Bonanni, Alberta ^a   Stifter, D ^b   Montaigne Ramil, A ^a   Schmidegg, K ^a   Hingerl, K ^c   Sitter, H ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b Upper Austrian Research GmbH   (Austria)

^c PROFACTOR GMBH   (Austria)

Author keywords

A1. In situ monitoring; A1. Spectroscopic ellipsometry; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ANNEALING; ELLIPSOMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; ONLINE SYSTEMS; SEMICONDUCTOR GROWTH;

GROWTH CONTROL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037292337     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01863-8     Document Type: Conference Paper

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