Memory effect of oxide/SiC:O/oxide sandwiched structures

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2094-2096

  Chang, T C ^a   Van, S T ^b   Yang, F M ^b   Liu, P T ^c   Sze, S M ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; DENSIFICATION; ELECTRIC CHARGE; INDUCTIVELY COUPLED PLASMA; MATHEMATICAL MODELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SANDWICH STRUCTURES; SILICA; SILICON CARBIDE; TITANIUM OXIDES;

CHARGE-TRAPPING LAYERS; DANGLING BONDS;

DATA STORAGE EQUIPMENT;

EID: 1942444674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1675924     Document Type: Article

References (11)

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