Silicon-rich-oxides as an alternative charge-trapping medium in fowler-nordheim and hot carrier type non-volatile-memory cells

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 189-192

  Rosmeulen, M ^a,b   Sleeckx, E ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TRAPS; GATES (TRANSISTOR); NONVOLATILE STORAGE; SILICON COMPOUNDS; THRESHOLD VOLTAGE; TRANSISTORS;

NON-VOLATILE MEMORY CELLS;

MOSFET DEVICES;

EID: 0036928685     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Rosmeulen et al., "Electrical Characterisation of Silicon-Rich-Oxide Based Memory Cells Using Pulsed Current-Voltage Techniques," proc. ESSDERC, accepted for publication, 2002.
2. B. Eitan el al., "NROM, A Novel Localised Trapping, 2-Bit Nonvolatile Memory Cell," IEEE EDL, vol. 21. no. 11, pp. 543-545, 2000.
3. M. White et al., "On the Go with SONOS," Circuits & Devices, pp. 22-32, July, 2000.
4. L. Lancaster, "Why SONOS?," IEEE NVSM Workshop, pp. 24-26,2001.