Temperature dependences of surface recombination DC current-voltage characteristics in MOS structures

Solid-State Electronics

Volumn 50, Issue 9-10, 2006, Pages 1532-1539

  Chen, Zuhui ^a   Jie, Bin B ^a   Sah, Chih Tang ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

Energy distribution; Interface traps; Reciprocal slope; Recombination current; Temperature dependence; Thermal activation energy

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ENERGY DISSIPATION; SURFACE PHENOMENA;

ENERGY DISTRIBUTION; INTERFACE TRAPS; RECOMBINATION CURRENT; THERMAL ACTIVATION ENERGY;

MOS DEVICES;

EID: 33750386847     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.08.005     Document Type: Article

References (25)

1. Wang Y., and Sah C.-T. Lateral profiling of impurity surface concentration in submicron metal-oxide-silicon transistors. J Appl Phys 90 (2001) 3539-3550
2. Sah C.-T. DCIV diagnosis for submicron MOS transistor design, process, reliability and manufacturing. Icsict 1 (2001) 1-15. http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=21144&isYear=2 001
3. Neugroschel A., Sah C.-T., et al. Direct current measurements of oxide and interface traps on oxidized silicon. IEEE Trans Electron Dev 42 (1995) 1657-1662
4. Sah C.-T., Neugroschel A., Han K.M., and Kavalieros J.T. Profiling interface traps in mos transistors by the dc current-voltage method. IEEE Electron Dev Lett 17 (1996) 72-74
5. Han K.M., and Sah C.-T. Linear reduction of drain current with increasing interface recombination in nMOS transistors stressed by channel hot electrons. Electron Lett 33 (1997) 1821-1822
6. Sah C.-T., Neugroschel A., and Han K M. Current accelerated channel hot carrier stress of MOS transistors. Electron Lett 34 (1998) 217-218
7. Sah C.-T. Reliability of transistors with low-K materials. Mater Res Soc Proc 13 (1998) 301-308
8. Han K.M., and Sah C.-T. Positive oxide charge from hot hole injection during channel-hot-electron stress. IEEE Trans Electron Dev 45 (1998) 1624-1627
9. Neugroschel A., and Sah C.-T. Interconnect and MOS transistor degradation at high current densities. Proc Int Reliab Phys Symp (1999) 30-36
10. Sah C-T. DCIV Monitor for Diagnosis of Sub-Quarter-Micron Technology. Report No. C98333, Semiconductor Research Corp. 1998.
11. Sah C-T. DCIV Method Does Work for Thin Tunneling Gate Oxides. Report No. C99428, Semiconductor Research Corp. 1999.
12. Sah C-T. DCIV Diagnosis of a Tunneling Thin Gate Oxide CMOS Technology. Report No. C99429, Semiconductor Research Corp. 1999.
13. Cai J., and Sah C.-T. Monitoring interface traps by DCIV method. IEEE Electron Dev Lett 20 (1999) 60-63
14. Cai J., and Sah C.-T. Evidence of discrete interface traps on thermally grown thin silicon oxide films. Appl Phys Lett 74 (1999) 257-259
15. Cai J., and Sah C.-T. Interfacial electronic traps in surface controlled transistors. IEEE Trans Electron Dev 47 (2000) 576-583
16. Jie B.B., Chim W.K., Li M.-F., and Lo K.F. Analysis of the DCIV peaks in electrically stressed pMOSFETs. IEEE Trans Electron Dev 48 5 (2001) 913-920
17. Sah C.-T., Noyce R.N., and Shockley W. Carrier generation and recombination in p-n junctions and p-n junction characteristics. Proc IRE 45 (1957) 1228-1243
18. Wang Y., Neugroschel A., and Sah C.-T. Temperature dependence of surface recombination current in MOS transistors. IEEE Trans Electron Dev 48 (2001) 2095-2101
19. Sah C.-T., and Pao H. The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistor. IEEE Trans Electron Dev 13 (1966) 393-409
20. Sah C-T.A History of MOS Transistor Compact Modeling. Technical Proceedings Workshop on Compact Modeling (WCM) 2005; 349-390. http://www.nsti.org/procs/Nanotech2005WCM/5/X99.01.
21. Slater J.C. Insulators semiconductors and metals quantum theory of molecules and solids 3 (1967), McGraw-Hill, New York See Wave Functions of Impurity Atoms in Appendix 2 on p. 292-307
22. Sah C-T, Chen Z and Jie B B. Effects of energy distribution of interface traps on recombination DC current-voltage lineshape. In: Meeting Bulletin of the 72nd Annual Meeting of the Southeastern Section of the American Physical Society (SESAPS 2005); p. 34.
23. Sah C.-T. A new semiconductor tetrode, the surface potential controlled transistor. Proc IRE 49 (1961) 1623-1634
24. Sah C.-T. Effects of surface recombination and channel on p-n junction and transistor characteristics. IRE Trans Electron Dev 9 (1962) 94-108
25. Chen Z., Jie B.B., and Sah C.-T. Theoretical accuracy of using Boltzmann and ionized-impurity approximation in the analysis of recombination current at interface traps in metal-oxide-silicon structures. J Appl Phys 99 (2006) 024502-024512