Evidence of discrete interface traps on thermally grown thin silicon oxide films

Applied Physics Letters

Volumn 74, Issue 2, 1999, Pages 257-259

  Cai, Jin ^a   Sah, Chin Tang ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003327430     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123273     Document Type: Article

References (25)

1. For a review of recent literature, see, for example. C.-T. Sah, EMIS Data Reviews (IEE, New York, 1987), Secs. 17.1-17.4, pp. 499-531.
2. E. H. Poindexter, G. J. Gerardi, M.-E. Rueckel, and P. J. Caplan, J. Appl. Phys. 56, 2844 (1984).
3. C.-T. Sah, J. Y. Sun, and J. J. Tzou, J. Appl. Phys. 53, 8886 (1982).
4. G. Van der Bosch, G. V. Groeseneken, P Heremans, and H. E. Maes, IEEE Trans. Electron Devices 38, 1820 (1991).
5. R. R. Siergiel, M. H. White, and N. S. Saks, Solid-State Electron. 35, 843 (1992).
6. N. S. Saks and M. G. Ancona, IEEE Electron Device Lett. 11, 339 (1990).
7. A. Pacelli, A. L. Lacaita, S. Villa, and L. Perron, IEEE Electron Device Lett. 19, 148 (1998).
8. H. S. Haddara and M. El-Sayed, Solid-State Electron. 31, 1289 (1988).
9. A. H. Edwards, Phys. Rev. B 36, 9638 (1987).
10. L. I. Schiff, Quantum Mechanics (McGraw-Hill, New York, 1968). The threshold well depth and well width for the presence of bound state in the three-dimensional square well is described in Sec. 15, pp. 83-88.
11. J. C. Slater, Insulators, Semiconductors, and Metals (McGraw-Hill, New York, 1967), Appendix 2, Wave Functions of Impurity Atoms, pp. 292-307, especially Fig. A2-6 on p. 304.
12. The random potential wells and the presence of scattering and binding states are the essence of the Anderson model of the diffusive-dispersive transport theory. See P. W. Anderson, Phys. Rev. 109, 1492 (1958). Also, N. Mott, M. Pepper, S. Pollitt, R. H. Wallis, and C. J. Adkins, Proc. R. Soc. London, Ser. A 345, 169 (1975).
13. The random potential wells and the presence of scattering and binding states are the essence of the Anderson model of the diffusive-dispersive transport theory. See P. W. Anderson, Phys. Rev. 109, 1492 (1958). Also, N. Mott, M. Pepper, S. Pollitt, R. H. Wallis, and C. J. Adkins, Proc. R. Soc. London, Ser. A 345, 169 (1975).
14. The effective medium theory was used to analyze percolation transport on macroscopic scale. Here, the effective medium is the atomic environment that surrounds the highly localized and identical core potential of the randomly spaced neutral point imperfections 2E
15. A. Neugroschel, C.-T. Sah, K. M. Han, M. S. Carrol, T. Nishida, J. T. Kavalieros, and Y. Lu, IEEE Trans. Electron Devices 42, 1657 (1995).
16. GB, on p. 129 can be extended to the present nonequilibrium case.
17. C.-T. Sah and W. Shockley, Phys. Rev. 109, 1103 (1958).
18. DD is the doping concentration in the quasineutral n well.
19. C.-T. Sah's, DCIV Diagnosis Monitor for Sub-Quarter-Micron Technology (SRC, 1998), C98333, pp. 22 and 24.
20. J. Cai and C.-T. Sah, IEEE Electron Device Lett, (to be published).
21. 2 and Si interface as the boundary of two dielectric media was used to estimate the bound state energy levels of impurity atoms located at the interface in C.-T. Sah's. Transistor Reliability, in Fundamentals of Solid State Electronics - Solution Manual (World Scientific, Singapore, 1996), Sec. 915 and the Table 915.1 on p. 120.
22. J. H. Stathis and E. Cartier, Phys. Rev. Lett. 72 (1994).
23. C.-T. Sah, A. Neugroschel, and K. M. Han, Electron. Lett. 34 (1998).
24. K. M. Han and C.-T. Sah, IEEE Trans. Electron Devices 45, 1380 (1998).
25. A. H. Edwards, Phys. Rev. B 44, 1832 (1991).