Linear reduction of drain current with increasing interface recombination in nMOS transistors stressed by channel hot electrons

Electronics Letters

Volumn 33, Issue 21, 1997, Pages 1821-1822

  Han, K M ^a   Sah, Chih Tang ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Hot electron effects; Transistors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON;

DRAIN CURRENT; HOT ELECTRON EFFECTS;

MOSFET DEVICES;

EID: 0031561281     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971178     Document Type: Article

References (9)

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