Theoretical accuracy of using Boltzmann and ionized impurity approximations in the analyses of recombination current at interface traps in metal-oxide-silicon structures

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Chen, Zuhui ^a   Jie, Bin B ^a   Sah, Chih Tang ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN DISTRIBUTION; DOPANT-IMPURITY CONCENTRATION; FERMI DISTRIBUTION; INTERFACE TRAPS;

APPROXIMATION THEORY; CONCENTRATION (PROCESS); DOPING (ADDITIVES); FERMI LEVEL; INTERFACES (MATERIALS); MOS DEVICES;

SILICON;

EID: 31644451937     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2159085     Document Type: Article

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