Profiling interface traps in MOS transistors by the DC current-voltage method

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 72-74

  Sah, Chih Tang ^a,b   Neugroschel, Arnost ^a,b   Han, K Michael ^a,b   Kavalieros, Jack T ^b  

^a IEEE

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; INTERFACES (MATERIALS); SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

DIRECT CURRENT-CURRENT VOLTAGE METHOD; INTERFACE TRAP DENSITY;

MOS DEVICES;

EID: 0030086978     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484127     Document Type: Article

References (30)

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