Current-accelerated channel hot carrier stress of MOS transistors

Electronics Letters

Volumn 34, Issue 2, 1998, Pages 217-219

  Sah, Chih Tang ^a   Neugroschel, A ^a   Han, K M ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

HYDROGEN BOND BREAKING THEORY; INTERFACE TRAP GENERATION;

MOSFET DEVICES;

EID: 0031648935     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980194     Document Type: Article

References (7)

1. NING, T.H., COOK, P., DENNARD, R., OSBURN, C., SCHUSTER, S., and YU, H.N.: '1 μm MOSFET VLSI technology: Hot-electron design constraint', IEEE Trans. Elec. Dev., 1979, 26, (4), pp. 346-353
2. TSUCHIYA, T., KOBAYASHI, T., and NAKAJIMA, S.: 'Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation', IEEE Trans. Elec. Dev., 1987, 34, (2), pp. 386-391
3. E degradation in BiCMOS transistors'. Proc. 30th IRPS, 1992, pp. 58-62
4. YI LU. , and SAH, C.-T.: 'Energy and momentum conservation during energetic carrier generation and recombination in silicon', Phys. Rev., 1995, B52, (8), pp. 5657-5664
5. NEUGROSCHEL, A., and SAH, C.-T.: 'Accelerated reverse emitter-base bias stress methodologies and time-to-failure application', IEEE Elec. Dev. Lett., 1996, 17, (3), pp. 112-114
6. NEUGROSCHEL, A., SAH, C.-T., and HAN, K. M.: 'Direct-current measurements of oxide and interface traps on oxidized silicon', IEEE Trans. Elec. Dev., 1995, 42, (9), pp. 1657-4662
7. For bond energies, see pp. 120-128 in 'Fundamentals of solid-state electronics - solution manual' (World Scientific, Singapore, 1996)