Advanced MOSFET gate dielectrics for high-performance microprocessors: Materials selection and analytical challenges

Advances in Solid State Physics

Volumn 45, Issue , 2005, Pages 375-388

  Zschech, E ^a   Engelmann, H J ^a   Ohsiek, S ^a   Tracy, B ^b   Adein, E ^b   Robie, S ^b   Bernard, J ^b   Schmeisser, D ^c  

^a IBM MICROELECTRONICS   (United States)

^b Submicron Development Center   (United States)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33750331239     PISSN: 14384329     EISSN: None     Source Type: Book Series    
DOI: 10.1007/11423256_30     Document Type: Article

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