Non-destructive probing of interfacial oxidation and nitridation states at RTP Si-oxides

Thin Solid Films

Volumn 428, Issue 1-2, 2003, Pages 216-222

  Hoffmann, P ^a   Schmeisser D ^a   Roters, G ^b   Nenyei, Z ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b Mattson Thermal Products GmbH   (Germany)

Author keywords

N20; NH3; Oxynitride; Photoelectron spectroscopy; Silicon; Ultrathin oxide

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL BONDS; COMPOSITION EFFECTS; DIELECTRIC MATERIALS; GASES; INTERFACES (MATERIALS); MIXTURES; NONDESTRUCTIVE EXAMINATION; NUMERICAL METHODS; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SYNCHROTRON RADIATION;

INTERFACIAL OXIDATION;

SILICA;

EID: 0037457197     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01266-X     Document Type: Conference Paper

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