Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Materials Science and Engineering: B

Volumn 134, Issue 2-3 SPEC. ISS., 2006, Pages 176-184

  Murphy, J D ^a   Senkader, S ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

Diffusion; Dislocation; Locking; Oxygen; Silicon; Transport

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL GROWTH FROM MELT; DIFFUSION; OXYGEN; SILICON; TRANSPORT PROPERTIES;

DISLOCATION LOCKING; DISLOCATION UNLOCKING STRESS; OXYGEN DIFFUSES; OXYGEN TRANSPORT;

DISLOCATIONS (CRYSTALS);

EID: 33750303871     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.06.045     Document Type: Article

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