Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments

Journal of the Electrochemical Society

Volumn 152, Issue 6, 2005, Pages

  Giannattasio, A ^a   Murphy, J D ^a   Senkader, S ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); NITROGEN; OXYGEN;

DISLOCATION LOCKING; NITROGEN IMPURITY; NITROGEN TRANSPORT; OXYGEN CONCENTRATION;

SILICON;

EID: 22544470023     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1901669     Document Type: Article

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