Kinetic study of oxygen dimer and thermal donor formation in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 19, 1998, Pages 12944-12951

  Aberg D ^a   Svensson, B ^a   Hallberg, T ^b   Lindstrom J ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001586691     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.12944     Document Type: Article

References (33)

1. C. S. Fuller, J. A. Ditzenberger, N. B. Hannay, and E. Buehler, Phys. Rev. 96, 833 (1954).
2. W. Kaiser, H. L. Frisch, and H. Reiss, Phys. Rev. Lett. 112, 1546 (1958).
3. W. Götz, G. Pensl, and W. Zulehner, Phys. Rev. B 46, 4312 (1992).
4. P. Wagner and J. Hage, Appl. Phys. A: Solids Surf. 49, 123 (1989).
5. M. Stavola, K. M. Lee, J. C. Nabity, P. E. Freeland, and L. C. Kimerling, Phys. Rev. Lett. 54, 2639 (1985).
6. P. Wagner, H. Gottschalk, J. M. Trombetta, and G. D. Watkins, J. Appl. Phys. 61, 346 (1987).
7. J. M. Trombetta, G. D. Watkins, J. Hage, and P. Wagner, J. Appl. Phys. 81, 1109 (1997).
8. P. Deák, in Proceedings from the NATO Advanced Research Workshop on the Early Stages of Oxygen Precipitation in Silicon, Exeter, UK, 1996, edited by R. Jones, Vol. 17 of NATO Advanced Study Institute Series 3: High Technology (Kluwer Academic, Dordrecht, 1996).
9. P. Deák, L. C. Snyder, and J. W. Corbett, Phys. Rev. B 45, 11 612 (1992).
10. D. J. Chadi, Phys. Rev. Lett. 77, 861 (1996).
11. S. A. McQaid, M. J. Binns, C. A. Londos, J. H. Tucker, and A. R. Brown, J. Appl. Phys. 77, 1427 (1995).
12. N. Meilwes, J.-M. Spaeth, W. Götz, and G. Pensl, Semicond. Sci. Technol. 9, 1623 (1994).
13. J. C. Mikkelsen, Appl. Phys. Lett. 40, 336 (1982).
14. G. D. Watkins, J. W. Corbett, and R. S. McDonald, J. Appl. Phys. 53, 7097 (1982).
15. M. Stavola, J. R. Patel, L. C. Kimerling, and P. E. Freeland, Appl. Phys. Lett. 42, 73 (1983).
16. U. Gösele and T. Y. Tan, Appl. Phys. A: Solids Surf. 28, 79 (1982).
17. L. C. Snyder, J. W. Corbett, P. Deák, and R. Wu, in Defects in Electronic Materials, Vol. 104 of Materials Research Society Symposium Proceedings, edited by M. Stavola, S. J. Pearton, and G. Davies (Materials Research Society, Warrendale, PA, 1988), p. 179.
18. B. G. Svensson, J. L. Lindström, and J. W. Corbett, Appl. Phys. Lett. 47, 841 (1985).
19. J. L. Lindström and T. Hallberg, Phys. Rev. Lett. 72, 2729 (1994).
20. K. Graff, E. Grallath, S. Ades, G. Goldbach, and G. Tölg, Solid-State Electron. 16, 887 (1973).
21. G. D. Davies and R. C. Newman, in Handbook on Semiconductors (Elsevier/North-Holland, Amsterdam, The Netherlands, 1994), Chap. 21.
22. T. Hallberg and J. L. Lindström, J. Appl. Phys. 79, 7570 (1996).
23. T. R. Waite, Phys. Rev. 107, 463 (1957).
24. F. M. d’Heurle, J. Mater. Res. 3, 167 (1988).
25. P. A. Stolk, D. J. Eaglesham, H. J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 66, 1370 (1995).
26. L. Murin and V. Markevich (Ref. 9).
27. R. Jones, Semicond. Sci. Technol. 5, 255 (1990).
28. H. J. Stein and J. W. Medernach, J. Appl. Phys. 79, 2337 (1996).
29. L. I. Murin, T. Hallberg, V. P. Markevich, and J. L. Lindström, Phys. Rev. Lett. 80, 93 (1998).
30. R. C. Newman, J. Phys. C 18, L967 (1985).
31. S. M. Hu, J. Appl. Phys. 45, 1567 (1974).
32. K. K. Larsen, V. Privitera, S. Coffa, F. Priolo, S. U. Campisano, and A. Carnera, Phys. Rev. Lett. 76, 1493 (1996).
33. P. Wagner, J. Hage, J. M. Trombetta, and G. D. Watkins, in Defects in Semiconductors 16, Vol. 83-87 of Material Science Forum, edited by G. Davies, G. G. DeLeo, and M. Stavola (Trans Tech, Zürich, Switzerland, 1992), p. 401.