On the locking of dislocations by oxygen in silicon

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 81, Issue 3, 2001, Pages 759-775

  Senkader, S ^a   Jurkschat, K ^a   Gambarro, D ^b   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DIFFUSION; ENTROPY; OXYGEN; SILICON; STRESS ANALYSIS;

OXYGEN CONCENTRATION;

DISLOCATIONS (CRYSTALS);

EID: 0035297048     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610108212170     Document Type: Article

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