Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

Applied Physics Letters

Volumn 74, Issue 24, 1999, Pages 3648-3650

  Ono, Toshiaki ^a   Rozgonyi, George A ^a   Asayama, Eiichi ^b   Horie, Hiroshi ^b   Tsuya, Hideki ^b   Sueoka, Koji ^b  

^a North Carolina State University   (United States)

^b Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ERROR FUNCTION EQUATION;

SILICON WAFERS;

EID: 0032620153     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123210     Document Type: Article

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