The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures

Journal of Applied Physics

Volumn 86, Issue 4, 1999, Pages 1878-1887

  McQuaid, S A ^a   Johnson, B K ^a   Gambaro, D ^b   Falster, R ^b   Ashwin, M J ^c   Tucker, J H ^c  

^a MEMC Electronic Materials Inc   (United States)

^b MEMC Electronic Materials SpA   (Italy)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001564910     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370983     Document Type: Article

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