Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon

Applied Physics Letters

Volumn 77, Issue 3, 2000, Pages 376-378

  Takeno, Hiroshi ^a   Sunakawa, Ken ^a   Suezawa, Masashi ^b  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041638623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126981     Document Type: Article

References (11)

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