Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 568, Issue 1, 2006, Pages 83-88

  Tuovinen, E ^a   Harkonen J ^a   Luukka, P ^a   Tuominen, E ^a   Verbitskaya, E ^b   Eremin, V ^b   Ilyashenko, I ^b   Pirojenko, A ^c   Riihimaki I ^c   Virtanen, A ^c   Leinonen, K ^d  

^a UNIVERSITY OF HELSINKI   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^d LAPPEENRANTA UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Czochralski silicon; Radiation hardness; Scanning electron microscope; Silicon detectors; Transient current technique

Indexed keywords

BACKSCATTERING; PROTON IRRADIATION; RADIATION HARDENING; SCANNING ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

CZOCHRALSKI SILICON; NEGATIVE SPACE CHARGE; SILICON DETECTORS; TRANSIENT CURRENT TECHNIQUE (TCT);

SILICON SENSORS;

EID: 33750287166     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.208     Document Type: Article

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