P+/n-/n+ Cz-Si detectors processed on p-type boron doped substrates with thermal donor induced space charge sign inversion

IEEE Nuclear Science Symposium Conference Record

Volumn 3, Issue , 2004, Pages 1999-2002

  Harkonen J ^a   Tuovinen, E ^a   Luukka, P ^a   Tuominen, E ^a   Li, Z ^b  

^a HELSINKI INSTITUTE OF PHYSICS   (Finland)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPING (ADDITIVES); IRRADIATION; MICROELECTRONICS; PARTICLE BEAM TRACKING; SILICON SENSORS; SILICON WAFERS;

BORON DOPING; CRYSTAL GROWTH TECHNIQUES; PARTICLE TRACKING SYSTEM; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 23844497768     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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