Radiation Hardness of Czochralski Silicon Studied by 10-MeV and 20-MeV Protons

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1942-1946

  Tuominen, E ^a   Harkonen J ^a   Tuovinen, E ^a   Lassila Perini, K ^a   Luukka, P ^a   Mehtala P ^a   Nummela, S ^a   Nysten, J ^a   Zibellini, A ^a   Li, Z ^b   Heikkila P ^c   Ovchinnikov, V ^c   Yli Koski, M ^c   Laitinen, P ^d   Pirojenko, A ^d   Riihimaki I ^d   Virtanen, A ^d  

^a CERN   (Switzerland)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c AALTO UNIVERSITY   (Finland)

^d UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

Czochralski silicon; Radiation hardness; Silicon detectors

Indexed keywords

ANNEALING; DIFFUSION; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; OXIDATION; PROTON IRRADIATION; RADIATION HARDENING; SILICON SENSORS; TRANSIENTS; VOLTAGE MEASUREMENT;

CZOCHRALSKI SILICON; SPACE CHARGE SIGN INVERSION (SCSI); TRANSIENT CURRENT TECHNIQUE (TCT);

HIGH ENERGY PHYSICS;

EID: 10744231222     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821405     Document Type: Conference Paper

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