Investigation of type inversion of n-bulk in 10 MeV proton-irradiated FZ silicon detectors using a scanning electron microscope

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 552, Issue 3, 2005, Pages 357-363

  Leinonen, Kari ^a   Palviainen, Tanja ^a   Tuuva, Tuure ^a   Tuovinen, Esa ^b   Härkönen, Jaakko ^b   Luukka, Panja ^b  

^a LAPPEENRANTA UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

Electric field; Radiation detector; Radiation tolerance; Silicon; Type inversion; Voltage

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; RADIATION DETECTORS; SCANNING ELECTRON MICROSCOPY; SILICON;

RADIATION TOLERANCE; TRANSIENT CURRENT TECHNIQUE; TYPE INVERSION;

PROTON IRRADIATION;

EID: 26944481115     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.07.005     Document Type: Article

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