Low-temperature growth (400 °C) of high-integrity thin silicon - Oxynitride films by microwave-excited high-density Kr - O2 - NH3 plasma

IEEE Transactions on Plasma Science

Volumn 32, Issue 4 III, 2004, Pages 1747-1751

  Ohtsubo, Kazuo ^a   Saito, Yuji ^b   Hirayama, Masaki ^c   Sugawa, Shigetoshi ^c   Aharoni, Herzl ^c,d   Ohmi, Tadahiro ^c  

^a SHARP CORPORATION   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; COMPOSITION EFFECTS; ELECTRON TUNNELING; FILM GROWTH; KRYPTON; LOW TEMPERATURE EFFECTS; MICROWAVES; OXYGEN; PLASMA DENSITY; SILICA; SILICON NITRIDE; THIN FILMS;

FOWLER-NORDHEIM TUNNELING; LOW TEMPERATURE GROWTH; MICROWAVE EXCITED HIGH DENSITY PLASMA; PLASMA SYSTEM; SILICON OXYNITRIDE;

PLASMA APPLICATIONS;

EID: 7244242198     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2004.833385     Document Type: Article

References (12)

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