SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7853-7856

Formation of silicon oxynitride films with low leakage current using N 2/O2 plasma near atmospheric pressure

(6) Hayakawa, Ryoma a Yoshimura, Takeshi a Ashida, Atushi a Kitahata, Hiroya b Yuasa, Motokazu b Fujimura, Norifumi a

a Osaka Prefecture University (Japan)

b SEKISUI CHEMICAL CO LTD (Japan)

Author keywords

Atmospheric pressure; Direct tunneling current; Nitrogen plasma; Silicon oxynitride film; Ultrathin gate oxide

Indexed keywords

ATMOSPHERIC PRESSURE; CAPACITANCE; ELECTRON TUNNELING; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; PLASMAS; SILICA; SILICON NITRIDE; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

DIRECT TUNNELING CURRENT; NITROGEN PLASMAS; SILICON OXYNITRIDE FILM; ULTRATHIN GATE OXIDE;

ULTRATHIN FILMS;

EID: 12844280492 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.7853 Document Type: Conference Paper

Times cited : (7)

References (23)

1
- 0001562219
- G. Lucovsky, H. Niimi, Y. Wu, C. R. Parker and J. R. Hauser: J. Vac. Sci. & Technol. A 16 (1998) 1721.
- (1998) J. Vac. Sci. & Technol. A , vol.16 , pp. 1721
- Lucovsky, G.¹ Niimi, H.² Wu, Y.³ Parker, C.R.⁴ Hauser, J.R.⁵

2
- 0035502945
- K. Watanabe, T. Tastumi, M. Togo and T. Mogami: J. Appl. Phys. 90 (2001) 4701.
- (2001) J. Appl. Phys. , vol.90 , pp. 4701
- Watanabe, K.¹ Tastumi, T.² Togo, M.³ Mogami, T.⁴

3
- 0037338856
- J. C. Wang, D. C. Shie, T. F. Lei and C. L. Lee: Electrochem. Solid-State Lett. 6 (2003) F34.
- (2003) Electrochem. Solid-state Lett. , vol.6
- Wang, J.C.¹ Shie, D.C.² Lei, T.F.³ Lee, C.L.⁴

4
- 0035832907
- S. Jeon, C. J. Choi, T. Y. Seong and H. Hwang: Appl. Phys. Lett. 79 (2001) 245.
- (2001) Appl. Phys. Lett. , vol.79 , pp. 245
- Jeon, S.¹ Choi, C.J.² Seong, T.Y.³ Hwang, H.⁴

5
- 0033418093
- K. Sekine, Y. Sito, M. Hirayama and T. Ohmi: J. Vac. Sci. & Technol. A 17 (1999) 3129.
- (1999) J. Vac. Sci. & Technol. A , vol.17 , pp. 3129
- Sekine, K.¹ Sito, Y.² Hirayama, M.³ Ohmi, T.⁴

6
- 0034317856
- Y. Fujisaki and H. Ishiwara: Jpn. J. Appl. Phys. 39 (2000) L1075.
- (2000) Jpn. J. Appl. Phys. , vol.39
- Fujisaki, Y.¹ Ishiwara, H.²

7
- 79956009342
- S. Mikroulis, A. Georgakilas, A. Kostopoulos, V. Cimalla and E. Dimakis: Appl. Phys. Lett. 80 (2002) 2886.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 2886
- Mikroulis, S.¹ Georgakilas, A.² Kostopoulos, A.³ Cimalla, V.⁴ Dimakis, E.⁵

8
- 0035881848
- H. Ohata, M. Hori and T. Goto: J. Appl. Phys. 90 (2001) 1955.
- (2001) J. Appl. Phys. , vol.90 , pp. 1955
- Ohata, H.¹ Hori, M.² Goto, T.³

9
- 0000149005
- H. Lu, W. J. Schaff, J. Hwang, H. Wu, W. Yeo and A. Pharkya: Appl. Phys. Lett. 77 (2000) 2548.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2548
- Lu, H.¹ Schaff, W.J.² Hwang, J.³ Wu, H.⁴ Yeo, W.⁵ Pharkya, A.⁶

10
- 0035339595
- H. Ohta, A. Nagashima, M. Hori and T. Goto: J. Appl. Phys. 89 (2001) 5083.
- (2001) J. Appl. Phys. , vol.89 , pp. 5083
- Ohta, H.¹ Nagashima, A.² Hori, M.³ Goto, T.⁴

11
- 12844286781
- M. Hirayama and T. Ohmi: Ext. Abstr. American Vacuum Symp., 1996, p. 199.
- Ext. Abstr. American Vacuum Symp., 1996 , pp. 199
- Hirayama, M.¹ Ohmi, T.²

12
- 0036469404
- Y. Kabouzi, M. D. Calzada, M. Moisan, K. C. Tran and C. Trassy: J. Appl. Phys. 91 (2002) 1008.
- (2002) J. Appl. Phys. , vol.91 , pp. 1008
- Kabouzi, Y.¹ Calzada, M.D.² Moisan, M.³ Tran, K.C.⁴ Trassy, C.⁵

13
- 84899927019
- S. Kanazawa, M. Kogoma, T. Moriwaki and S. Okazaki: J. Phys. D 21 (1988) 838.
- (1988) J. Phys. D , vol.21 , pp. 838
- Kanazawa, S.¹ Kogoma, M.² Moriwaki, T.³ Okazaki, S.⁴

14
- 12844277878
- U.S. Patent 3040358
- M. Yuasa: U.S. Patent 3040358 (1997).
- (1997)
- Yuasa, M.¹

15
- 12844252967
- to be published in
- R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa and N. Fujimura: to be published in J. Appl. Phys.
- J. Appl. Phys.
- Hayakawa, R.¹ Yoshimura, T.² Ashida, A.³ Kitahata, H.⁴ Yuasa, M.⁵ Fujimura, N.⁶

16
- 0030289893
- S. V. Hattangady, H. Niimi and G. Lucovsky: J. Vac. Sci. & Technol. A 14 (1996) 3017.
- (1996) J. Vac. Sci. & Technol. A , vol.14 , pp. 3017
- Hattangady, S.V.¹ Niimi, H.² Lucovsky, G.³

17
- 0037606277
- H. W. Chen, D. Landheer, T. S. Chao, J. E. Hulse and T. Y. Huang: J. Electrochem. Soc. 148 (2001) F140.
- (2001) J. Electrochem. Soc. , vol.148
- Chen, H.W.¹ Landheer, D.² Chao, T.S.³ Hulse, J.E.⁴ Huang, T.Y.⁵

18
- 0001249642
- G. Lucovsky, Y. Wu, H. Niimi, H. Yang, J. Keister and J. E. Rowe: J. Vac. Sci. & Technol. A 18 (2000) 1163.
- (2000) J. Vac. Sci. & Technol. A , vol.18 , pp. 1163
- Lucovsky, G.¹ Wu, Y.² Niimi, H.³ Yang, H.⁴ Keister, J.⁵ Rowe, J.E.⁶

19
- 0043011961
- K. Muraoka, K. Kurihara, N. Yasuda and H. Satake: J. Appl. Phys. 94 (2003) 2038.
- (2003) J. Appl. Phys. , vol.94 , pp. 2038
- Muraoka, K.¹ Kurihara, K.² Yasuda, N.³ Satake, H.⁴

20
- 0042842527
- M. Takahashi, M. Tamura, Asuha, T. Kobayashi and H. Kobayashi: J. Appl. Phys. 94 (2003) 726.
- (2003) J. Appl. Phys. , vol.94 , pp. 726
- Takahashi, M.¹ Tamura, M.² Kobayashi, A.T.³ Kobayashi, H.⁴

21
- 0035844403
- H. N. Al-Shareef, A. Karamcheti, T. Y. Luo, G. Bersuker, G. A. Brown, R. W. Murto, M. D. Jackson, H. R. Huff, P. Kraus, D. Lopes, C. Olsen and G. Miner: Appl. Phys. Lett. 78 (2001) 3875.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3875
- Al-Shareef, H.N.¹ Karamcheti, A.² Luo, T.Y.³ Bersuker, G.⁴ Brown, G.A.⁵ Murto, R.W.⁶ Jackson, M.D.⁷ Huff, H.R.⁸ Kraus, P.⁹ Lopes, D.¹⁰ Olsen, C.¹¹ Miner, G.¹²

22
- 9144258943
- J. G. Simmons: J. Appl. Phys. 34 (1963) 1793.
- (1963) J. Appl. Phys. , vol.34 , pp. 1793
- Simmons, J.G.¹

23
- 0029342950
- T. Yoshida, D. Imafuku, J. L. Alay, S. Miyazaki and M. Hirose: Jpn. J. Appl. Phys. 34 (1995) L903.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Yoshida, T.¹ Imafuku, D.² Alay, J.L.³ Miyazaki, S.⁴ Hirose, M.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.