Charge control and electron transport properties in InyAl1-yAs/InxGa1-xAs metamorphic HEMTs: Effect of indium content

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 102-105

  Cordier, Y ^a   Zaknoune, M ^a   Bollaert, S ^a   Cappy, A ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CONTROL; INDIUM ALUMINUM ARSENIDE;

CARRIER CONCENTRATION; CRYSTAL LATTICES; ELECTRIC VARIABLES CONTROL; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033706260     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)

1. H.Wang, G.I.Ng, RLai, Y.Hwang, D.C.Lo, RDia. A.Freudenthal and T.Block: IEE Roc.-Microw. Antennas Propagation, 143 (1996), pp. 361-366
2. Y.C.Pao and J.S.Harris : Proc. Third. Int. Conf InP anc Related Compounds, 1991, pp. 344-347
3. P.Chy C.L.Lin and H.KWieder : Thin Solid Films 166(1988), pp. 155-162
4. J.C.Harmand, T.Matsuno and K.Inoue: Jpn. J. Appl Phys. 28 (1989) L1101
5. H.Happy, S.Bollaert, H.Fourré and A.Cappy: IEEE Trans.Electron.Devices, 45 (1998), 2089-2095
6. S.Bollaert, Y.Cordier, V.Hoel, M.Zaknoune, H.Happy. S.Lepilliet and A.Cappy: IEEE Electron. Device. Lett. 20. 1999) pp. 123-125
7. Y.Cordier, D.Ferré, J. Cryst. Growth (201-202) 1 (1999: pp. 263-266
8. Y.Cordier, S.Bollaext, M.Zaknoune, J.Dipersio and D.Ferré, Jpn. J. .Appl. Phys. Vol 38. Part 1, No. 2B, (1999) p.1164
9. H.Sari and H.H.Wieder: J. Appl. Phys. 85 (6), pp.3380-3382 (1999)
10. H-Fourré, F.Diette and A.Cappy : J. Vac. Sci. Technol B14,3400 (1996)