Characteristics of In0.52Al0.48As/ln xGa1-xAsyP1-y/ In 0.52Al0.48As high electron-mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1044-1047

  Chen, Yen Wei ^a   Hsu, Wei Chou ^a   Chen, Yeong Jia ^a   Hsu, Rong Tay ^b   Wu, Yue Huei ^b   Lin, Yu Shyan ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Land Mark Optoelectronics Corporation   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; IONIZATION; LATTICE CONSTANTS; LEAKAGE CURRENTS; OPTOELECTRONIC DEVICES;

BAND GAPS; GATE VOLTAGE SWING; LINEAR OPERATION REGIME; SHEET CARRIER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3242655643     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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