Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)2Sx treatment

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1167-1171

  Lin, Yow Jon ^a   Lee, Ching Ting ^b   Chang, Hsing Cheng ^c  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BURSTEIN-MOSS SHIFT; OPTICAL BANDGAP; PASSIVATED LAYERS; ROOM TEMPERATURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33749057279     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/031     Document Type: Article

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