High growth rate homoepitaxial diamond deposition on off-axis substrates

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 266-271

  Bauer, T ^a   Schreck, M ^a   Sternschulte, H ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Diamond growth and characterization; High growth rate; Homoepitaxy; Raman spectroscopy

Indexed keywords

CHARGE COUPLED DEVICES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; MICROWAVES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

DIAMOND GROWTH AND CHARACTERIZATION; HIGH GROWTH RATES; HOMOEPITAXY; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD);

DIAMOND DEPOSITS;

EID: 18444391219     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.10.043     Document Type: Conference Paper

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