InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights

Applied Physics Letters

Volumn 69, Issue 23, 1996, Pages 3578-3580

  Wohlmuth, W A ^a   Arafa, M ^a   Mahajan, A ^a   Fay, P ^a   Adesida, I ^a  

^a United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRODES; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS;

DARK CURRENT; DARK CURRENT DENSITY; METAL SEMICONDUCTOR METAL PHOTODETECTORS; RESPONSIVITY;

PHOTODETECTORS;

EID: 0030566550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117212     Document Type: Article

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