Annealing behavior of Pd/GaN (0001) microstructure

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 105-107

  Kim, C C ^a   Je, J H ^a   Kim, D W ^b   Baik, H K ^b   Lee, S M ^c   Ruterana, Pierre ^d  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Yonsei University   (South Korea)

^c Kangwon National University   (South Korea)

^d LABORATOIRE CRISMAT   (France)

Author keywords

Epitaxy; Gallide; Interfacial structure; Microstructure; Pd

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; EVAPORATION; FILM GROWTH; FILM PREPARATION; INTERFACES (MATERIALS); PALLADIUM; SEMICONDUCTING GALLIUM COMPOUNDS;

AS-DEPOSITED FILMS;

SEMICONDUCTING FILMS;

EID: 0035933098     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00761-3     Document Type: Article

References (9)