Reduction of the outgassing segment in acetal based chemically amplified resist for EUV lithography

Journal of Photopolymer Science and Technology

Volumn 19, Issue 4, 2006, Pages 533-538

  Masuda, Seiya ^a   Kawanishi, Yasutomo ^a   Hirano, Shuuji ^a   Kamimura, Sou ^a   Mizutani, Kazuyoshi ^a   Shitabatake, Koji ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

Chemical amplified resist; EUV lithography; Outgassing

Indexed keywords

EID: 33748456696     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.19.533     Document Type: Article

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