A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

Journal of Crystal Growth

Volumn 291, Issue 1, 2006, Pages 60-65

  Gao, C X ^a   Yu, F C ^a   Choi, A R ^a   Kim, D J ^a   Kim, C G ^b   Kim, C S ^c   Kim, H J ^a   Ihm, Y E ^a  

^a Chungnam National University   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

A1. Single precursor; A3. MBE; B1. Be; B1. GaN; B1. Mg

Indexed keywords

BERYLLIUM; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; PASSIVATION; X RAY DIFFRACTION ANALYSIS;

DOPANTS; GAN:BE FILMS; MG-H-MG; SINGLE PRECURSORS;

GALLIUM NITRIDE;

EID: 33748166222     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.007     Document Type: Article

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