Characteristics of Mg-doped GaN epilayers grown with the variation of Mg incorporation

Journal of Crystal Growth

Volumn 193, Issue 3, 1998, Pages 300-304

  Lee, Cheul Ro ^a   Leem, Jae Young ^a   Noh, Sam Kyu ^a   Park, Seong Eun ^a   Lee, Ju In ^a   Kim, Chang Soo ^a   Son, Sung Jin ^b   Leem, Ki Young ^b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

GaN; Mg

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

DOUBLE-CRYSTAL DIFFRACTOMETRY (DCXRD); GALLIUM NITRIDE; VAN DER PAUW TECHNIQUE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032182755     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00436-9     Document Type: Article

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