2D junction delineation for the failure analysis of silicon carbide devices

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2005, Pages 105-109

  Buzzo, Marco ^a,b   Ciappa, Mauro ^b   Fichtner, Wolfgang ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28044445389     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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3. Giannazzo F., Calcagno L., Raineri V., Ciampolini L., Ciappa M., Napoletani E. "Quantitative carrier profiling hi ion-implanted 6H-SiC". Applied Physics Letters 79(8), 2001.
4. Bowallius O., Anand S., Nordell N., Landgren G., Karlsson S. "Scanning capacitance microscopy investigations of SiC structures". Material Science in Semiconductor Processing 4 (2001), pp 209-211.
5. Giannazzo F., Calcagno L., Roccaforte F., Musumeci P., La Via F., Raineri V. "Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy". Applied Surface Science 184 (2001), pp 183-189.
6. +N Junction by Scanning Capacitance and Scanning Electron Microscopy". Microelectronics Reliability 44, 1681-1686 (2004).
7. 2 Interface States". Phys. stat. sol (a) 162, 321 (1997).
8. Zavyalov V.V., McMurray J.S., Williams C.C. "Noise in scanning capacitance microscopy measurements". J. Vac. Sci. Technol. B 18(3), 2000.