Dopant profile measurements in ion implanted 6H-SiC by scanning capacitance microscopy

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 183-189

  Giannazzo, F ^a,b   Calcagno, L ^a   Roccaforte, F ^a,b   Musumeci, P ^a   La Via, F ^b   Raineri, V ^b  

^a INFM   (Italy)

^b CNR IMETEM   (Italy)

Author keywords

Annealing; Carrier profiles; Defects; Doping; Ion implantation

Indexed keywords

ANNEALING; DEFECTS; DOPING (ADDITIVES); ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SCANNING CAPACITANCE MICROSCOPY (SCM);

SILICON CARBIDE;

EID: 0035852260     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00500-1     Document Type: Article

References (16)