Characterization of 2D dopant profiles for the design of proton implanted high-voltage superjunction

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2005, Pages 285-289

  Buzzo, Marco ^a,b   Ciappa, Mauro ^b   Rub, Michael ^a   Fichtner, Wolfgang ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28044467092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. G. Deboy, März, J.P. Stengl, H. Strack, Tihanyi, H. Weber. "A new generation of high voltage MOSFETs break the limit line of silicon". Tech. Digest IEDM 98, pp. 983-685, San Francisco, 1998.
2. M. Saggio, D. Fagone, S. Musumeci. "MDmeshTM: innovative technology for high voltage power MOSFETs". Proc. ISPSD 2000, pp. 65-68, Toulouse, 2000.
3. http://www.infineon.com/coolmos.
4. M. Rüb, M. Bär, F.J. Niedernostheide, M. Schmitt, H.J. Schulze, A. Willmeroth. "First study on SJ high-voltage transistor with n-columns formed by proton implantation and annealing". Proc. ISPSD 2004, pp. 181-184, Kitakyushu, 2004.
5. W. Wondrak, D. Silber. "Buried recombination layers with enhanced n-type conductivity for silicon power devices". Physica 129B. 322 (1985).
6. SRIM, The Stopping and Range of Ions in Matter. http://www.srim.org.
7. H.J. Schulze, F.J. Niedernostheide, M. Schmitt, U. Kellner-Werdehausen, G. Wachutka. "Influence of irradiation-induced defects on the electrical performance of power devices ". Electrochemical Society Proceedings Vol. 20, pp. 320-335 (2002).
8. 2 Transistor Formed by 25 MeV Masked Boron Implantation", Proc. ISPSD 2004, pp.455-458, Kitakyushu, 2004
9. F. Jahnel, private communications.
10. C.C. Williams, "Two-dimensional dopant profiling by Scanning Capacitance Microscopy". Annu. Rev. Mater. Sci. 29, pp. 471-504, 1999.
11. M. Stangoni, M. Ciappa, M. Buzzo, M. Leicht, W. Fichtner. "Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction". Microelectronics Reliability 42 (2002), pp 1701-1706.
12. M. Leicht, G. Fritzer, B. Basnar, S. Golka, J. Smoliner. "A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices". Microelectronics Reliability 41(2001), pp 1535-1537.
13. M. Wright Jenkins. "A new preferential etch for defects in silicon crystals". J. Electrochem. Soc. 124 (1977) 757.
14. http://www.synopsis.com