Scanning capacitance microscopy investigations of SiC structures

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 209-211

  Bowallius, O ^a   Anand, S ^a   Nordell, N ^a   Landgren, G ^a   Karlsson, S ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL STRUCTURE; DRY ETCHING; HYDROFLUORIC ACID; MICROSCOPIC EXAMINATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; VAPOR PHASE EPITAXY;

SCANNING CAPACITANCE MICROSCOPY;

SILICON CARBIDE;

EID: 0035246821     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00132-3     Document Type: Article

References (8)

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