-
1
-
-
0242495786
-
Over 40-Gbit/s InP HEMT ICs for optical communication systems
-
Oct.
-
T. Suzuki, Y. Nakasha, H. Kano, M. Sato, S. Masuda, K. Sawada, K. Makiyama, T. Takahashi, T. Hirose, N. Hara, and M. Takigawa, "Over 40-Gbit/s InP HEMT ICs for optical communication systems," IEICE Trans. Electron., vol.E86-C, no.10, pp.1916-1922, Oct. 2003.
-
(2003)
IEICE Trans. Electron.
, vol.E86-C
, Issue.10
, pp. 1916-1922
-
-
Suzuki, T.1
Nakasha, Y.2
Kano, H.3
Sato, M.4
Masuda, S.5
Sawada, K.6
Makiyama, K.7
Takahashi, T.8
Hirose, T.9
Hara, N.10
Takigawa, M.11
-
2
-
-
0031364714
-
Device technology of InP/InGaAs HBTs for 40-Gbit/s optical transmission applications
-
H. Masuda, K. Ouchi, A. Terano, H. Suzuki, K. Watanabe, T. Oka, H. Matsubara, and T. Tanoue, "Device technology of InP/InGaAs HBTs for 40-Gbit/s optical transmission applications," GaAs IC Symposium, pp.139-142, 1997.
-
(1997)
GaAs IC Symposium
, pp. 139-142
-
-
Masuda, H.1
Ouchi, K.2
Terano, A.3
Suzuki, H.4
Watanabe, K.5
Oka, T.6
Matsubara, H.7
Tanoue, T.8
-
3
-
-
0036102257
-
50 Gbit/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication
-
M. Meghelli, A.V. Rylyakov, and L. Shan, "50 Gbit/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication," ISSCC Dig. Tech. Papers, pp.260-261, 2003.
-
(2003)
ISSCC Dig. Tech. Papers
, pp. 260-261
-
-
Meghelli, M.1
Rylyakov, A.V.2
Shan, L.3
-
4
-
-
12444326284
-
max
-
max," IEEE Electron Device Lett., vol.26, no.1, pp.11-13, 2005.
-
(2005)
IEEE Electron Device Lett.
, vol.26
, Issue.1
, pp. 11-13
-
-
Griffith, Z.1
Dahlstrom, M.2
Rodwell, M.J.W.3
Fang, X.M.4
Lubyshev, D.5
Wu, Y.6
Fastenau, J.M.7
Liu, W.K.8
-
5
-
-
0346394363
-
High-speed InP/InGaAs DHBTs with a thin pseudomorphic base
-
M. Ida, K. Kurishima, K. Ishii, and N. Watanabe, "High-speed InP/InGaAs DHBTs with a thin pseudomorphic base," GaAs IC Symposium, pp.211-214, 2003.
-
(2003)
GaAs IC Symposium
, pp. 211-214
-
-
Ida, M.1
Kurishima, K.2
Ishii, K.3
Watanabe, N.4
-
6
-
-
3943092602
-
max over 300 GHz in a new manufacturable technology
-
max over 300 GHz in a new manufacturable technology," IEEE Electron Device Lett., vol.25, no.8, pp.520-522, 2004.
-
(2004)
IEEE Electron Device Lett.
, vol.25
, Issue.8
, pp. 520-522
-
-
He, G.1
Howard, J.2
Le, M.3
Partyka, P.4
Li, B.5
Kim, G.6
Hess, R.7
Bryie, R.8
Lee, R.9
Rustomji, S.10
Pepper, J.11
Kail, M.12
Helix, M.13
Elder, R.B.14
Jansen, D.S.15
Harff, N.B.16
Prairie, J.F.17
Daniel, E.S.18
Gilbert, B.K.19
-
7
-
-
21644435770
-
First demonstration of sub-0.25 μm width emitter InP-DHBTs with > 400 GHz f(t) and > 400 GHz f(max)
-
T. Hussain, Y. Royter, D. Hitko, M. Montes, M. Madhav, I. Milosavljevic, R. Rajavel, S. Thomas, M. Antcliffe, A. Arthur, Y. Boegeman, M. Sokolich, J. Li, and P. Asbeck, "First demonstration of sub-0.25 μm width emitter InP-DHBTs with > 400 GHz f(t) and > 400 GHz f(max)," International Electron Devices Meeting, pp.553-556, 2004.
-
(2004)
International Electron Devices Meeting
, pp. 553-556
-
-
Hussain, T.1
Royter, Y.2
Hitko, D.3
Montes, M.4
Madhav, M.5
Milosavljevic, I.6
Rajavel, R.7
Thomas, S.8
Antcliffe, M.9
Arthur, A.10
Boegeman, Y.11
Sokolich, M.12
Li, J.13
Asbeck, P.14
-
8
-
-
84979255931
-
HEMTs with ultrahigh cutoff frequency
-
K. Shinohara, T. Matsui, Y. Yamashita, A. Endoh, K. Hikosaka, T. Mimura, I. Watanabe, and S. Hiyamizu, "HEMTs with ultrahigh cutoff frequency," Int. Symposium on Compound Semiconductors, pp.124-131, 2003.
-
(2003)
Int. Symposium on Compound Semiconductors
, pp. 124-131
-
-
Shinohara, K.1
Matsui, T.2
Yamashita, Y.3
Endoh, A.4
Hikosaka, K.5
Mimura, T.6
Watanabe, I.7
Hiyamizu, S.8
-
9
-
-
21644474327
-
T = 350/300 GHz and gate delay below 3.3 ps
-
Dec.
-
T = 350/300 GHz and gate delay below 3.3 ps," International Electron Devices Meeting, pp.247-250, Dec. 2004.
-
(2004)
International Electron Devices Meeting
, pp. 247-250
-
-
Khater, M.1
Rieh, J.S.2
Adam, T.3
Chinthakindi, A.4
Johnson, J.5
Krishnasamy, R.6
Meghelli, M.7
Pagette, F.8
Sanderson, D.9
Schnabel, C.10
Schonenberg, K.T.11
Smith, P.12
Stein, K.13
Strieker, A.14
Jeng, S.J.15
Ahlgren, D.16
Freeman, G.17
-
10
-
-
21844431647
-
Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers
-
R. Aidam, R. Lösch, M. Walther, R. Driad, and S. Kallenbach, "Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers," 16th Int. Conf. on InP and Related Materials, pp.342-345, 2004.
-
(2004)
16th Int. Conf. on InP and Related Materials
, pp. 342-345
-
-
Aidam, R.1
Lösch, R.2
Walther, M.3
Driad, R.4
Kallenbach, S.5
-
11
-
-
33747892444
-
InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth
-
K. Schneider, R. Driad, R.E. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, and G. Weimann, "InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth," Int. Microwave Symposium Dig., pp.1591-1593, 2005.
-
(2005)
Int. Microwave Symposium Dig.
, pp. 1591-1593
-
-
Schneider, K.1
Driad, R.2
Makon, R.E.3
Tessmann, A.4
Aidam, R.5
Quay, R.6
Schlechtweg, M.7
Weimann, G.8
-
12
-
-
0036713751
-
InP D-HBT ICs for 40 Gbit/s and higher bitrate lightwave transceivers
-
Y. Bayens, G. Geoegiou, J.S. Weiner, A. Leven, V. Houtsma, P. Paschke, Q. Lee, R.F. Kopf, Y. Yang, L. Chua, C. Chen, C.T. Liu, and Y.K. Chen, "InP D-HBT ICs for 40 Gbit/s and higher bitrate lightwave transceivers," IEEE J. Solid-State Circuits, vol.37, no.9, pp.1152-1159, 2002.
-
(2002)
IEEE J. Solid-State Circuits
, vol.37
, Issue.9
, pp. 1152-1159
-
-
Bayens, Y.1
Geoegiou, G.2
Weiner, J.S.3
Leven, A.4
Houtsma, V.5
Paschke, P.6
Lee, Q.7
Kopf, R.F.8
Yang, Y.9
Chua, L.10
Chen, C.11
Liu, C.T.12
Chen, Y.K.13
-
13
-
-
0028126274
-
A novel HBT distributed amplifier design topology based on attenuation compensation techniques
-
K.W. Kobayashi, R. Esfandiari, and A.K. Oki, "A novel HBT distributed amplifier design topology based on attenuation compensation techniques," Int. Microwave Symp. Dig., vol.1, pp.447-450, 1994.
-
(1994)
Int. Microwave Symp. Dig.
, vol.1
, pp. 447-450
-
-
Kobayashi, K.W.1
Esfandiari, R.2
Oki, A.K.3
-
14
-
-
0029222462
-
A comparison of low frequency-noise in GaAs and InP-based HBTs and VCOs
-
J. Cowles, L. Tran, T. Block, D. Streit, C. Grossman, G. Chao, and A. Oki, "A comparison of low frequency-noise in GaAs and InP-based HBTs and VCOs," Microwave Symp. Dig., pp.689-692, 1995.
-
(1995)
Microwave Symp. Dig.
, pp. 689-692
-
-
Cowles, J.1
Tran, L.2
Block, T.3
Streit, D.4
Grossman, C.5
Chao, G.6
Oki, A.7
-
15
-
-
21644457269
-
Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz
-
R.E. Makon, K. Schneider, R. Driad, M. Lang, R. Aidam, R. Quay, and G. Weimann, "Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz," Compound Semiconductor IC Symposium, pp. 159-162, 2004.
-
(2004)
Compound Semiconductor IC Symposium
, pp. 159-162
-
-
Makon, R.E.1
Schneider, K.2
Driad, R.3
Lang, M.4
Aidam, R.5
Quay, R.6
Weimann, G.7
-
16
-
-
20344368298
-
Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs
-
R.E. Makon, M. Lang, R. Driad, K. Schneider, M. Ludwig, R. Aidam, R. Quay, M. Schlechtweg, and G. Weimann, "Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs," Electron. Lett, vol.41, no.11, p.644, 2005.
-
(2005)
Electron. Lett
, vol.41
, Issue.11
-
-
Makon, R.E.1
Lang, M.2
Driad, R.3
Schneider, K.4
Ludwig, M.5
Aidam, R.6
Quay, R.7
Schlechtweg, M.8
Weimann, G.9
|