SCOPUS 정보 검색 플랫폼

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-August, Issue , 2003, Pages 124-131

HEMTs with ultrahigh cutoff frequency

(8) Shinohara, K a Matsui, T a Yamashita, Y b Endoh, A b Hikosaka, K b Mimura, T b Watanabe, I c Hiyamizu, S c

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

b FUJITSU LABORATORIES LTD (Japan)

c OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; RECONFIGURABLE HARDWARE;

ELECTRON VELOCITY; HIGH CURRENT GAIN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); HIGH-SPEED PERFORMANCE; PARASITIC RESISTANCES; SOURCE AND DRAINS; SOURCE RESISTANCE; ULTRA HIGH SPEED;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84979255931 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ISCSPC.2003.1354443 Document Type: Conference Paper

Times cited : (8)

References (8)

1
- 0037089133
- K. Shinohara, Y. Yamashita, A. Endoh, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu, Jpn. J. Appl. Phys., vol 41, no. 4B, pp. L437-L439 (2002).
- (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.4 , pp. L437-L439
- Shinohara, K.¹ Yamashita, Y.² Endoh, A.³ Hikosaka, K.⁴ Matsui, T.⁵ Mimura, T.⁶ Hiyamizu, S.⁷

2
- 0036803456
- Y. Yamashita, A. Endoh, K. Shinohara, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimuta, IEEE Electron Device Lett., vol. 23, no. 10, pp. 573-575 (2002).
- (2002) IEEE Electron Device Lett. , vol.23 , Issue.10 , pp. 573-575
- Yamashita, Y.¹ Endoh, A.² Shinohara, K.³ Hikosaka, K.⁴ Matsui, T.⁵ Hiyamizu, S.⁶ Mimuta, T.⁷

3
- 84979281803
- submitted
- K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu, submitted to IEEE Electron Device Lett.
- IEEE Electron Device Lett.
- Shinohara, K.¹ Yamashita, Y.² Endoh, A.³ Watanabe, I.⁴ Hikosaka, K.⁵ Matsui, T.⁶ Mimura, T.⁷ Hiyamizu, S.⁸

4
- 0032272325
- T. Suemitsu, T. Ishii, H. Yokoyama, Y. Umeda, T. Enoki, Y. Ishii, and T. Tamamura, Proc. IEEE IEDM, pp. 223-226, (1998).
- (1998) Proc. IEEE IEDM , pp. 223-226
- Suemitsu, T.¹ Ishii, T.² Yokoyama, H.³ Umeda, Y.⁴ Enoki, T.⁵ Ishii, Y.⁶ Tamamura, T.⁷

5
- 0035423475
- Y. Yamashita, A. Endoh, K. Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu, and T. Matsui, IEEE Electron Device Lett., vol. 22, no. 8, pp. 367-369 (2001).
- (2001) IEEE Electron Device Lett. , vol.22 , Issue.8 , pp. 367-369
- Yamashita, Y.¹ Endoh, A.² Shinohara, K.³ Higashiwaki, M.⁴ Hikosaka, K.⁵ Mimura, T.⁶ Hiyamizu, S.⁷ Matsui, T.⁸

6
- 0035506980
- K. Shinohara, Y. Yamashita, A. Endoh, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, IEEE Electron Device Lett., vol. 22, no. 11, pp. 507-509 (2001).
- (2001) IEEE Electron Device Lett. , vol.22 , Issue.11 , pp. 507-509
- Shinohara, K.¹ Yamashita, Y.² Endoh, A.³ Hikosaka, K.⁴ Matsui, T.⁵ Hiyamizu, S.⁶ Mimura, T.⁷

7
- 0036026393
- K. Shinohara, T. Matsui, Y. Yamashita, A. Endoh, K. Hikosaka, T. Mimuta, and S. Hiyamizu, J. Vac. Sci. Technol. B, vol. 20, pp. 2096-2100 (2002).
- (2002) J. Vac. Sci. Technol. B , vol.20 , pp. 2096-2100
- Shinohara, K.¹ Matsui, T.² Yamashita, Y.³ Endoh, A.⁴ Hikosaka, K.⁵ Mimuta, T.⁶ Hiyamizu, S.⁷

8
- 0025519250
- T. Enoki, K. Arai, and Y. Ishii, IEEE Electron Device Lett., vol. 11, no. 11, pp. 502-504 (1990).
- (1990) IEEE Electron Device Lett. , vol.11 , Issue.11 , pp. 502-504
- Enoki, T.¹ Arai, K.² Ishii, Y.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.