-
1
-
-
0036102257
-
50Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial-communication systems
-
M. Meghelli, A. Rylyakov, and L. Shan, "50Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial-communication systems," IEEE ISSCC Dig. Tech. Papers, pp.260-261, 2002.
-
(2002)
IEEE ISSCC Dig. Tech. Papers
, pp. 260-261
-
-
Meghelli, M.1
Rylyakov, A.2
Shan, L.3
-
2
-
-
0033356997
-
High-speed multiplexers: A 50Gb/s 4:1 MUX in InP HBT technology
-
J.P. Mattia, R. Pullela, G. Georgieu, Y. Baeyens, H.S. Tsai, Y.K. Chen, C. Dorschky, T. Winkler Von Mohrenfels, M. Reinhold, C. Groepper, M. Sokolich, L. Nguyen, and MUX. Stanchina, "High-speed multiplexers: A 50Gb/s 4:1 MUX in InP HBT technology," IEEE GaAs IC Symp. Tech. Dig., pp.189-192, 1999.
-
(1999)
IEEE GaAs IC Symp. Tech. Dig.
, pp. 189-192
-
-
Mattia, J.P.1
Pullela, R.2
Georgieu, G.3
Baeyens, Y.4
Tsai, H.S.5
Chen, Y.K.6
Dorschky, C.7
Von Mohrenfels, T.W.8
Reinhold, M.9
Groepper, C.10
Sokolich, M.11
Nguyen, L.12
Stanchina, W.13
-
3
-
-
0037046463
-
Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors
-
May
-
K. Ishii, K. Murata, M. Ida, K. Kurishima, T. Enoki, T. Shibata, and E. Sano, "Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors," Electron. Lett., vol.38, no.10, pp.480-481, May 2002.
-
(2002)
Electron. Lett.
, vol.38
, Issue.10
, pp. 480-481
-
-
Ishii, K.1
Murata, K.2
Ida, M.3
Kurishima, K.4
Enoki, T.5
Shibata, T.6
Sano, E.7
-
4
-
-
0036928260
-
100-Gbit/s logic IC using 0.1-μm-gate-length InAlAs/InGaAs/InP HEMTs
-
K. Murata, K. Sano, H. Kitabayashi, S. Sugitani, H. Sugahara, and T. Enoki, "100-Gbit/s logic IC using 0.1-μm-gate-length InAlAs/InGaAs/InP HEMTs," IEDM 2002 Digest.
-
IEDM 2002 Digest
-
-
Murata, K.1
Sano, K.2
Kitabayashi, H.3
Sugitani, S.4
Sugahara, H.5
Enoki, T.6
-
5
-
-
0034843460
-
Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems
-
T. Takahashi, M. Nihei, K. Makiyama, M. Nishi, T. Suzuki, and N. Hara, "Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems," Proc. 2001 IPRM, pp.614-617.
-
Proc. 2001 IPRM
, pp. 614-617
-
-
Takahashi, T.1
Nihei, M.2
Makiyama, K.3
Nishi, M.4
Suzuki, T.5
Hara, N.6
-
6
-
-
0036113805
-
A 90Gb/s 2:1 multiplexer IC in InP-based HEMT technology
-
T. Suzuki, Y. Nakasha, T. Takahashi, K. Makiyama, K. Imanishi, T. Hirose, and Y. Watanabe, "A 90Gb/s 2:1 multiplexer IC in InP-based HEMT technology," IEEE ISSCC Dig. Tech. Papers, pp. 192-193, 2002.
-
(2002)
IEEE ISSCC Dig. Tech. Papers
, pp. 192-193
-
-
Suzuki, T.1
Nakasha, Y.2
Takahashi, T.3
Makiyama, K.4
Imanishi, K.5
Hirose, T.6
Watanabe, Y.7
-
7
-
-
0036073116
-
A 50-Gbit/s 1:4 demultiplexer IC in InP-based HEMT technology
-
H. Kano, T. Suzuki, S. Yamaura, Y. Nakasha, K. Sawada, T. Takahashi, K. Makiyama, T. Hirose, and Y. Watanabe, "A 50-Gbit/s 1:4 demultiplexer IC in InP-based HEMT technology," IEEE MTT-S Dig., pp.75-78, 2002.
-
(2002)
IEEE MTT-S Dig.
, pp. 75-78
-
-
Kano, H.1
Suzuki, T.2
Yamaura, S.3
Nakasha, Y.4
Sawada, K.5
Takahashi, T.6
Makiyama, K.7
Hirose, T.8
Watanabe, Y.9
-
8
-
-
0036112362
-
A 43 Gb/s full-rate-clock 4:1 multiplexer in InP-based HEMT technology
-
Y. Nakasha, T. Suzuki, H. Kano, A. Ohya, K. Sawada, K. Makiyama, T. Takahashi, M. Nishi, T. Hirose, M. Takikawa, and Y. Watanabe, "A 43 Gb/s full-rate-clock 4:1 multiplexer in InP-based HEMT technology," IEEE ISSCC Dig. Tech. Papers, pp.190-191, 2002.
-
(2002)
IEEE ISSCC Dig. Tech. Papers
, pp. 190-191
-
-
Nakasha, Y.1
Suzuki, T.2
Kano, H.3
Ohya, A.4
Sawada, K.5
Makiyama, K.6
Takahashi, T.7
Nishi, M.8
Hirose, T.9
Takikawa, M.10
Watanabe, Y.11
-
9
-
-
0035445535
-
49-GHz preamplifier with a transimpedance gain of 52dBΩ using InP HEMTs
-
Sept.
-
H. Shigematsu, M. Sato, T. Suzuki, T. Takahashi, K. Imanishi, N. Kara, H. Ohnishi, and Y. Watanabe, "49-GHz preamplifier with a transimpedance gain of 52dBΩ using InP HEMTs," IEEE J. Solid-State Circuits, vol.36, pp.1309-1313, Sept. 2001.
-
(2001)
IEEE J. Solid-State Circuits
, vol.36
, pp. 1309-1313
-
-
Shigematsu, H.1
Sato, M.2
Suzuki, T.3
Takahashi, T.4
Imanishi, K.5
Kara, N.6
Ohnishi, H.7
Watanabe, Y.8
-
10
-
-
0036438849
-
1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology
-
M. Sato, H. Shigematsu, Y. Inoue, T. Arai, K. Sawada, T. Takahashi, K. Makiyama, and T. Hirose, "1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology," IEEE GaAs IC Symposium Tech. Digest, pp.167-170, 2002.
-
(2002)
IEEE GaAs IC Symposium Tech. Digest
, pp. 167-170
-
-
Sato, M.1
Shigematsu, H.2
Inoue, Y.3
Arai, T.4
Sawada, K.5
Takahashi, T.6
Makiyama, K.7
Hirose, T.8
-
11
-
-
0036438401
-
An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems
-
S. Masuda, T. Hirose, T. Takahashi, M. Nishi, S. Yokokawa, S. Iijima, K. Ono, N. Hara, and K. Joshin, "An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems," IEEE GaAs IC Symposium Tech. Digest., pp.99-102, 2002.
-
(2002)
IEEE GaAs IC Symposium Tech. Digest.
, pp. 99-102
-
-
Masuda, S.1
Hirose, T.2
Takahashi, T.3
Nishi, M.4
Yokokawa, S.5
Iijima, S.6
Ono, K.7
Hara, N.8
Joshin, K.9
|