Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 159-162

  Makon, R E ^a   Schneider, K ^a   Driad, R ^a   Lang, M ^a   Aidam, R ^a   Quay, R ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

FundamentalVCO; InP DBHT; Output power; Phase noise

Indexed keywords

FUNDAMENTAL VCO; INP-DHBT; OUTPUT POWER; PHASE NOISE;

ACOUSTIC VARIABLES CONTROL; BANDWIDTH; CAPACITORS; CURRENT DENSITY; ELECTRIC POTENTIAL; HETEROJUNCTION BIPOLAR TRANSISTORS; VARIABLE FREQUENCY OSCILLATORS;

POWER AMPLIFIERS;

EID: 21644457269     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392521     Document Type: Conference Paper

References (9)

1. K.W. Kobayashi, A. K. Oki, L. T. Tran, J. C. Cowles, A. Gutierrez-Aitken, F. Yamada, T. R. Block, D. C. Streit, "A 108 GHz InP-HBT Monolithic Push-Push VCO with Low Phase Noise and Wide Tuning Bandwidth," IEEE Journal of Solid-States Circuits., vol. 34, no. 9, pp. 1225-1232, Sep. 1999.
2. Y. Baeyens, Y. K. Chen, " A Monolithic Integrated 150 GHz SiGe HBT Push-Push VCO with Simultaneous Differential V-band Output," 2003 IEEE MTT-S Digest, pp. 877-880.
3. H. Li, H.-M. Rein, M. Schwerd, "SiGe VCOs Operating up to 88 GHz, suitable for Automotive Radar Sensors," Electronic Letters, vol. 39, no. 18, Sep. 2003
4. H. Wang, K. W. Chang, D. C.-W. Lo, L. T. Tran, J.-C. Cowles, T.-R. Block, G.-S. Dow, A. Oki, D.-C. Streit, B.-R. Allen, " A 62 GHz Monolithic InP-based HBT VCO," IEEE Microwave and Guided Wave Letters, vol. 5, no. 11, Nov. 1995.
5. Y. Baeyens, C. Dorschky, N. Weimann, Q. Lee, R. Kopf, G. Georgiou, J.-P. Mattia, R. Hamm, Y.-K. Chen, " Compact InP-Based HBT VCOs with a Wide Tuning Range at W- and D-Band," IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 12, Dec. 2000.
6. A. Leuther, A. Tessman., M. Damman, W. Reinert, M. Schlechtweg, M. Mikulla, M. Walther, G. Weimann, "70 nm Low-Noise Metamorphic HEMT on 4 inch GaAs Wafers" 2003 Indium Phosphide Related Materials (IPRM), Santa Barbara, CA, USA, 2003, 578 p.215-18.
7. H. Li, H.-M. Rein, R.-E. Makon, "Wide-Band VCOs in SiGe Production Technology Operating up to about 70GHz", IEEE Microwave and Wireless Comp. Letters, vol. 13, no. 10, Oct.2003.
8. H. Li and H.-M. Rein "Millimeter-wave VCOs with Wide Tuning Range and Low Phase Noise, Fully integrated in a SiGe Bipolar Production Technology", IEEE Journal of Solid-States Circuits., vol. 38, pp. 184-191, 2003.
9. Liyang Zhang, Rajasekhar Pullela, Christopher Winczewski, Jimmy Chow, Dino Mensa, Shrinivasan Jaganathan, and Ruai Yu, "A 37-50 GHz InP HBT VCO IC for OC-768 Fiber Optic Communication Applications", 2002 IEEE RFIC Symposium, pp.85-88.