Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 342-345

  Aidam, R ^a   Losch R ^a   Walther, M ^a   Driad, R ^a   Kallenbach, S ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITANCE; CRYSTAL LATTICES; ELECTRIC CURRENTS; GROWTH KINETICS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; PHOSPHORUS; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

CUTOFF FREQUENCIES; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); LATTICE MISMATCH; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 21844431647     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)