Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at Spring-8

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 1, 2006, Pages 353-364

  Hattori, T ^a   Nohira, H ^a   Azuma, K ^b   Sakai, K W ^c   Nakajima, K ^c   Suzuki, M ^c   Kimura, K ^c   Sugita, Y ^d   Ikenaga, E ^e   Kobayashi, K ^e   Takata, Y ^f   Kondo, H ^g   Zaima, S ^g  

^a TOKYO CITY UNIVERSITY   (Japan)

^b Advanced LCD Technologies Development Center Co Ltd   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

^e JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^f RIKEN SPring 8 Center   (Japan)

^g NAGOYA UNIVERSITY   (Japan)

Author keywords

Angle resolved photoelectron spectroscopy; Depth profiling; High k dielectric silicon interfacial transition layer; SiO2 si interface; X ray photoelectron spectroscopy

Indexed keywords

INTERFACES (MATERIALS); PHOTONS; POROUS SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED PHOTOELECTRON SPECTROSCOPY; DEPTH PROFILING; HIGH-K DIELECTRIC/SILICON INTERFACIAL TRANSITION LAYERS; SIO2SI INTERFACE;

ELECTRIC INSULATORS;

EID: 33747707527     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003680     Document Type: Conference Paper

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