Low temperature gate insulator for Poly-Si TFTs by combination of photo oxidation and PECVD

SID Conference Record of the International Display Research Conference

Volumn , Issue , 2001, Pages 375-378

  Nakata, Yukihiko ^a   Okamoto, Tetsuya ^a   Hamada, Toshimasa ^a   Itoga, Takashi ^a   Ishii, Yutaka ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; INTERFACES (MATERIALS); PHOTOOXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SILICA; XENON;

LOW TEMPERATURE GATE INSULATORS;

THIN FILM TRANSISTORS;

EID: 0035782717     PISSN: 10831312     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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